Infineon BSS84P Datasheet

This file is a summary of BSS84P SIPMOS Small-Signal-Transistor products, including product features, models, maximum ratings, electrical characteristics and other information.


Infineon BSS84P Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
1.9 MB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
8F88CC7423A8D58FF859354E62746DB5

About this manual

The BSS84P is a P‑channel enhancement‑mode, logic‑level SIPMOS transistor designed for small‑signal applications. It features an avalanche‑rated structure, a maximum drain‑source breakdown voltage of -60 V, and a continuous drain current of -0.17 A. The device is RoHS compliant and supplied in a PG‑SOT‑23 package.

The datasheet provides comprehensive electrical characteristics, including gate threshold voltage, transconductance, capacitances, and dynamic switching times, as well as thermal parameters such as junction‑to‑solder‑point resistance. Safety and warranty notices are included, emphasizing proper use in life‑support systems.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Gate Charge Characteristics
  • Reverse Diode
  • Safe Operating Area
  • Typ. output characteristic
  • Typ. avalanche energy
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