INFINEON Manuals

BFG196 is an NPN silicon RF transistor designed for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz. It can operate at collector currents ranging from 20 mA to 80 mA. It is also suitable for power amplifiers in DECT and PCN systems. The transistor has a cutoff frequency of 7.5 GHz and a gain of 1.5 dB at 900 GHz. It is an electrostatic discharge sensitive device and requires careful handling.

BFG 194 is a RF transistor, mainly used in low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA

BFG193 is a NPN silicon RF transistor, suitable for low noise, high gain amplifiers with frequencies up to 2 GHz.

BFG 19S is a NPN silicon RF transistor, suitable for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.

BFG 135A is a RF transistor produced by Texas Instruments (TI). It has an integrated emitter ballast resistor and a maximum current of 150mA. Its maximum power is 1W and its maximum frequency is 2GHz.

BFQ19S is a NPN silicon RF transistor, used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.

BF999 is a N-channel MOSFET, suitable for high frequency applications such as FM applications.

This document is a test report on BGA622 GPS. The report lists the various performance parameters of BGA622 GPS, such as supply current, insertion power gain, noise figure, input return loss, output return loss, reverse isolation, etc.

This document introduces the features and characteristics of the BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800-2500 MHz receiver applications, including 70 GHz ft SiGe technology, 50 ohm matched output, pre-matched input, integrated output DC blocking capacitor, integrated RF choke on internal bias network, low current consumption, shutdown or sleep mode, unconditionally stable, low external component count, exceptional noise figure, etc.

The BGA619 is an LNA MMIC designed for use in today’s PCS systems which require excellent linearity in each of several gain step modes.

BGA616 is a silicon germanium broadband MMIC amplifier produced by Infineon Technologies

Secure Mobile Solutions Silicon Discretes Data sheet introduces the features and characteristics of the BGA614 Silicon Germanium Broadband MMIC Amplifier.

BGA612 is a silicon germanium broadband MMIC amplifier released by Infineon Technologies AG. The product has good performance characteristics

This document is an applications note for BGA430 and BGB540 MMIC, introducing their application in European, Asian and North American DBS LNB I.F. amplifier chains

BGA428 is a high-gain, low-noise amplifier MMIC. It is suitable for wireless silicon discretes.