INFINEON Manuals

This document is the target data sheet of BTS 5242-2L Smart High-Side Power Switch, which details the features and characteristics of the product.

This is the technical information of FP50R12KE3 module, including electrical properties, maximum rated values, transistor and diode parameters.

BFR182W is an NPN silicon RF transistor designed for low noise, high gain broadband amplifiers with collector currents ranging from 1mA to 20mA. It has a frequency of 8GHz and a gain of 1.2dB at 900MHz.

XC866 8-Bit Single-Chip Microcontroller is a product of Infineon Technologies AG, released in December 2006, containing product features and characteristics for reference.

This document describes the features and characteristics of the BAS70 series silicon Schottky diodes released in 2006, including applications, package types, and maximum ratings.

This document describes the features and characteristics of the CoolSET-F2 series, as well as the ICE2A0565/165/265/365, ICE2B0565/165/265/365, ICE2A0565Z, ICE2A180Z/280Z, ICE2A765I/2B765I, ICE2A765P2/ICE2B765P2 models.

IGP03N120H2 IGW03N120H2 are high-performance IGBT transistors with a 1200V rated voltage and 3A rated current. These IGBT transistors are manufactured using Infineon's high-performance HighSpeed2 technology, which provides excellent switching performance and temperature stability. They are suitable for various power conversion applications, such as SMPS, lamp ballasts and ZVS converters.

This document describes the BCV61 model NPN silicon double transistor, which can be used as a current mirror. It has good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.

PROFET® ITS436L2 is a high-side power switch for industrial applications with integrated overcurrent, overvoltage, short circuit and thermal protection.

BSM 100 GD 120 DN2 is an IGBT power module from Infineon with a maximum collector-emitter voltage of 1200 V and a maximum collector current of 150 A.

This document describes the PMA7110 RF Transmitter IC with embedded 8051 Microcontroller, LF 125kHz ASK Receiver and FSK/ASK 315/434/868/915 MHz Transmitter. It provides information about the features and characteristics of the product.

The features of the IPP60R099CP CoolMOSTM power transistor include: worldwide best R ds,on in TO220 package, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc.

This data sheet provides information on maximum ratings, thermal characteristics, package type, package dimensions, pinout, applications for SPB21N50C3 Cool MOS™ Power Transistor

BAR66 is a silicon PIN diode array produced by ST company, and it is used for surge overvoltage clamping. Its maximum reverse voltage is 150V, maximum forward current is 200mA, maximum power is 250mW, and the operating temperature range is -55 to 125 degrees.

The features of IPW60R165CP CoolMOSTM power transistor include lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant. CoolMOS CP is specially designed for hard switching topologies in server and telecom applications.