INFINEON Manuals

TDK 5101 315 MHz ASK/FSK Transmitter Specification published in October 2002.

This is the 2.4 edition of the PFET data sheet released by Texas Instruments on September 21, 2021, which details the characteristics and electrical parameters of the device

BSS131 SIPMOS® Small-Signal-Transistor is an N-channel enhancement mode logic level MOSFET with high voltage and current capacity. It features Pb-free lead-plating and is RoHS compliant.

This document describes a Cool MOS™ power transistor called SPP04N80C3 and SPA04N80C3, which features a new high voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance, and improved transconductance.

PROFET® BTS 6143 D is a smart high side power switch with reverse battery protection, short circuit protection, current limitation, overload protection, thermal shutdown protection, overvoltage protection, loss of ground protection, Vbb protection, very low standby current, fast demagnetization and electrostatic discharge (ESD) protection. It is suitable for 12V and 24V DC grounded loads power switch, can replace electromechanical relays, fuses and discrete circuits.

The SAE 800 is a single-tone, dual-tone or triple-tone gong IC designed for a very wide supply voltage range. If the oscillator is set to f0 = 13.2 kHz for example, the IC will issue in triple-tone- mode the minor and major third e2 – C sharp – a, corresponding to 660 Hz – 550 Hz – 440 Hz, in dual-tone-mode the minor third e2 – C sharp, and in single-tone-mode the tone e2 (derived from the fundamental frequency f0 ; f1 = f0 / 20, f2 = f0 / 24, f3 = f0 / 30). When it is not triggered, the IC is in a standby state and only draws a few µA. It comes in a compact P-DIP-8-1 or P-DSO-8-1 (SMD) package and only requires a few external components.

TDA5251 F1 ASK/FSK 315MHz Wireless Transceiver Preliminary Specification

IPA60R520CP CoolMOSTM power transistor features the lowest RON x Qg figure-of-merit, ultra-low gate charge, extreme dv/dt rating and high peak current capability. It is qualified according to JEDEC1) for target applications and complies with RoHS.

This document describes the features and characteristics of IPD60R520CP CoolMOSTM power transistor, including lowest figure-of-merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc.

The BSS138W G SIPMOS® small-signal transistor features N-channel, enhancement mode, logic level, dv/dt rated, Pb-free lead-plating; RoHS compliant

The BAS21 is a silicon switching diode from ON Semiconductor that is characterized by its high switching speed and high breakdown voltage.

This document describes the features and applications of PROFET® ITS 640S2 Infineon Technologies AG, including short circuit protection, current limitation, proportional load current sense, CMOS compatible input, etc.

This document introduces the characteristics and parameters of Panasonic 1200V 600A IGBT.

BSP135 SIPMOS® is a N-channel, depletion mode, dv/dt rated small-signal transistor with a maximum rating of T j=25°C, unless otherwise specified.