This document describes the applications and characteristics of the BAT 17W silicon Schottky diodes. It is suitable for mixer applications in the VHF / UHF range and high-speed switching applications.
This datasheet is for BAT 17-07, which is a silicon Schottky diode from BAT company for mixer applications in the VHF / UHF range and high-speed switching applications. The maximum reverse voltage of this diode is 4 V, the maximum forward current is 130 mA, the maximum power dissipation is 150 mW, and the operating temperature range is -55 to 150 °C.
This document describes the features and characteristics of BAT 17 series silicon Schottky diodes, which are suitable for mixer applications in the VHF/UHF range and high-speed switching applications.
BAT 15-03W is a silicon Schottky diode produced by Texas Instruments (TI). This diode has low noise characteristics and can be used for DBS mixer applications. The maximum reverse voltage is 4V, the maximum forward current is 100mA, the rated power is 100mW, and the working temperature range is -55°C to 150°C. The storage temperature range is -55°C to 150°C
BAT 14-099R is a silicon crossover ring quad Schottky diode, suitable for applications such as double balanced mixers, phase detectors, and modulators. It has a medium barrier characteristic.
This document is a datasheet for the BAT 14-077S Silicon Single Flip Chip Schottky Diode. The diode is suitable for W-band applications up to 80 GHz. It is an electrostatic discharge sensitive device and requires handling precautions.
BAT 14-077D is a silicon dual flip chip Schottky diode produced by GaAs Components. This diode has medium barrier mixer diode characteristics and is suitable for W-band applications up to 80 GHz.
This document describes the features and characteristics of the BAT 14-03W silicon Schottky diode, including its applications, low noise figure, and maximum ratings.
The BFG 235 is a NPN Silicon RF Transistor produced by Texas Instruments. It is used for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA. It is also suitable for DECT and PCN systems power amplifiers. The BFG 235 has an integrated emitter ballast resistor and a fT of 5.5 GHz.
