SPW11N60CFD is a high voltage power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge.
The SPW11N60CFD is a Cool MOS™ power transistor from Infineon, offering high voltage capability (600 V) and low gate charge for efficient switching. It features a TO‑247 package, periodic avalanche rating, and an intrinsic fast‑recovery body diode, making it suitable for high‑power applications.
The document provides detailed maximum ratings, thermal characteristics, electrical parameters, gate‑charge data, and mechanical dimensions, enabling designers to assess performance, safe operating area, and integration requirements.
| Continuous drain current (ID) | 11 A |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
It is rated for a continuous drain current of 11 A.
The gate‑source voltage is rated at +20 V.