SKW20N60 is a 600V, 20A IGBT product from Infineon, using NPT technology with a soft, fast-recovery anti-parallel EmCon diode. Compared with the previous generation, its Eoff is reduced by 75%, and its conduction loss is also lower. This product is suitable for applications such as motor controls and inverters.
The SKW20N60 is a fast IGBT built with Infineon’s NPT‑technology for 600 V motor‑control and inverter applications. It features a soft, fast‑recovery anti‑parallel EmCon diode, low conduction losses, and a short‑circuit withstand time of 10 µs.
The document provides maximum ratings, thermal characteristics, switching parameters, and typical performance curves, along with safety notices and contact information for Infineon Technologies.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| Continuous collector current (IC) | 20 A |
| Power dissipation (PD) | 179 W |
| Short‑circuit withstand time | 10 µs |
The device can withstand a short circuit for up to 10 µs.
The SKW20N60 is rated for a collector‑emitter voltage of 600 V.
The continuous collector current is specified at 20 A.
The device can dissipate up to 179 W at a case temperature of 25 °C.