BCR523 is a NPN silicon digital transistor suitable for switching circuits, inverters, interface circuits, and driver circuits. It has built-in bias resistors (R1=1kΩ, R2=10kΩ).
The BCR523 is an NPN silicon digital transistor designed for switching circuits, inverters, interface and driver applications. It features a built‑in bias resistor and is supplied in a SOT‑23 package.
Key specifications include a 50 V collector‑emitter rating, 500 mA maximum collector current, 330 mW power dissipation, and a transition frequency of up to 100 MHz. Thermal resistance is less than 215 K/W and the device operates over a wide temperature range.
| Collector‑emitter voltage (VCEO) | 50 V |
|---|---|
| Collector‑base voltage (VCBO) | 50 V |
| Emitter‑base voltage (VEBO) | 5 V |
| DC collector current (IC) | 500 mA |
| Total power dissipation | 330 mW |
| Junction temperature | 150 °C |
| Storage temperature range | -65 °C to 150 °C |
| Thermal resistance (RθJC) | < 215 K/W |
| Transition frequency (fT) | 100 MHz |
| Input on voltage (VON) | 0.4 V to 1.4 V |
| Input off voltage (VOFF) | 0.3 V to 1 V |
The BCR523 can withstand up to 50 V between collector and emitter.
The device is rated for a maximum DC collector current of 500 mA.
The input on voltage ranges from 0.4 V to 1.4 V.
The transition frequency is specified up to 100 MHz.