BFR340F is a NPN silicon RF transistor manufactured by Texas Instruments. Its features are low voltage/low current operation, transistor frequency of 14GHz, high insertion gain, ideal for low current amplifiers and oscillators.
IPI50R350CP CoolMOSTM Power Transistor is a new power device with the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance.
This is the datasheet for the C161S single-chip microcontroller released by Infineon Technologies AG. The microcontroller adopts a 16-bit RISC architecture and has a maximum operating frequency of 100MHz. It has 16KB of on-chip RAM and 32KB of on-chip ROM.
The IPW90R340C3 CoolMOS™ power transistor features the lowest RON x Qg, extreme dv/dt rating and high peak current capability. It is qualified according to JEDEC1) for target applications, and is lead-free lead plated, RoHS compliant.
SPN01N60C3 is a Cool MOS™ power transistor with revolutionary high voltage technology, ultra-low gate charge, extreme dv/dt rating, ultra-low effective capacitance, and improved transconductance. It has a maximum drain-source voltage of 650V, an on-resistance of 6Ω, and a continuous drain current of 0.3A.
IPW50R299CP is a CoolMOSTM power transistor with the lowest figure of merit RON x Qg, ultra-low gate charge, extreme dv/dt rating, and high peak current capability. It is designed for hard and soft switching SMPS topologies, as well as CCM PFC and PWM applications.
IPP60R600CP CoolMOSTM Power Transistor Features• Lowest figure-of-merit RON x Qg• Ultra low gate charge• Extreme dv/dt rated• High peak current capability• Qualified according to JEDEC1) for target applications• Pb-free lead plating; RoHS compliantCoolMOS CP is designed for:• Hard switching SMPS topologies
The IPA50R250CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc.
This is a GCTFP P-TO220-3-31 type Schottky diode produced by GCT. Its maximum dynamic resistance is 100mΩ, the maximum reverse voltage is 5V, the maximum reverse current is 1A, and the maximum working temperature is 150℃
BFR93AW is a NPN silicon RF transistor produced by Rogers. It is suitable for low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5mA to 30mA
The BA595/BA885/BA895 are three silicon PIN diodes, which are current-controlled RF resistors for switching and attenuating applications. They have a frequency range of 1MHz-2GHz, and are especially useful as antenna switches in TV-sat tuners. They have very low harmonics.
