This data sheet is for the Infineon IKW30N60T product. It includes information such as the rated voltage, rated current, switching frequency, package type, and maximum operating temperature.
The IKW30N60T is part of Infineon's TrenchStop® series of low‑loss, high‑speed IGBTs designed for 600 V applications such as frequency converters and uninterruptible power supplies. The device features a very low collector‑emitter saturation voltage, low gate charge, and a fast‑recovery anti‑parallel diode, offering tight parameter distribution and high ruggedness.
The datasheet lists maximum ratings, thermal resistance values, static and dynamic electrical characteristics, and detailed switching performance under various temperatures and gate‑resistor conditions. Graphs illustrate collector current versus switching frequency, power dissipation versus case temperature, and typical switching energy losses.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| Maximum collector current (Ic) at 100 °C | 30 A |
| Gate‑emitter voltage (VGE) | +20 V |
| Power dissipation at 25 °C | 187 W |
| Thermal resistance, junction‑case (Rjc) | 0.80 K/W |
The device can withstand up to 600 V between collector and emitter.
It can dissipate up to 187 W at a case temperature of 25 °C.
The junction‑to‑case thermal resistance is 0.80 K/W.