INFINEON Manuals

IPI90R800C3 CoolMOS™ Power Transistor is designed for Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications as well as Industrial SMPS applications. It features lowest RONxQg, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating; RoHS compliant, and ultra low gate charge.

IPB60R165CP CoolMOS® Power Transistor is a product with lowest RONxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1） for target applications, Pb-free lead plating, RoHS compliant.

BSM 10 GD 120 DN2 is a power module from Infineon, including fast recovery diodes, packaged in ECONOPACK 2K, with a maximum voltage of 1200V and a maximum current of 15A.

This document is about the specification of TDA 5211

IPB50R140CP CoolMOSTM Power Transistor is a high-performance power transistor with lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance. It is designed for: Hard & soft switching SMPS topologies, CCM PFC for ATX Notebook adapter, PDP and LCD TV, PWM for ATX, Notebook adapter, PDP and LCD TV.

IDT06S60C is a 2A 600V SiC Schottky diode from IDT. Its features are revolutionary semiconductor material - Silicon Carbide, switching behavior benchmark, no reverse recovery/ no forward recovery, no temperature influence on the switching behavior, high surge current capability, Pb-free lead plating; RoHS compliant, qualified according to JEDEC1) for target applications, breakdown voltage tested at 5mA2). This diode is specially designed for fast switching applications like CCM PFC and Motor Drives.

This document describes the features of the SPW17N80C3 Cool MOS™ power transistor, including new high voltage technology, worldwide best RDS(on) in TO 247 package, ultra low gate charge, periodic avalanche rating, and extreme dv/dt rating.

IPI60R299CP CoolMOSTM Power Transistor features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating and high peak current capability.

BC846, BC850 are NPN Silicon AF transistors, mainly used for AF input stages and driver applications. They feature high current gain, low collector-emitter saturation voltage, and low noise between 30Hz and 15kHz.

This datasheet provides parameter information for SPP12N50C3, SPI12N50C3, SPA12N50C3, including maximum voltage, current, power consumption, temperature, etc.

This document describes the features and characteristics of a product, including temperature control, voltage requirements, wave soldering, etc.

IPP50R140CP CoolMOSTM Power Transistor

PROFET® ITS 716G is a Smart High-Side Power Switch For Industrial Applications product from Infineon, featuring four 40V/140mΩ status feedback channels, and is used in industrial applications with a load voltage of 12V/24V.

BAS40./BAS140W is a silicon Schottky diode produced by ON Semiconductor. It is mainly used for high-voltage fast switching, circuit protection, voltage clamping, high-level detection and mixing.

This datasheet provides detailed information on the BUZ 73 AL SIPMOS ® power transistor. The transistor features an N channel, enhancement mode, avalanche rated and logic level functionality. It has a maximum channel-source breakdown voltage of 200V, a continuous drain current of 5.5A and a 0.6Ω drain-source on-resistance.