INFINEON Manuals

IPI60R385CP CoolMOSTM Power Transistor Features

BAV99 is a silicon switching diode produced by Texas Instruments. It has high switching speed, high reverse voltage, low power consumption and other characteristics, and can be applied to high-frequency switching circuits.

This document describes the features and characteristics of the BC846.-BC850. series NPN silicon AF transistors, released in 2006. They are suitable for AF input stages and driver applications, with high current gain, low collector-emitter saturation voltage, low noise between 30 Hz and 15 kHz, and complementary types available (BC856.-BC860. PNP).

This datasheet mainly introduces the features and characteristics of the SPP16N50C3, SPI16N50C3 and SPA16N50C3 products, including rated current, continuous current, pulsed current, avalanche energy, avalanche current, gate source voltage, power dissipation, operating temperature, reverse diode dv/dt and drain source voltage slope.

BUZ 73 is an N-channel enhancement mode avalanche-rated power transistor. It has a maximum rating of 200V, 7A and 0.4 Ohms of on-resistance.

16-Bit Single-Chip Microcontroller

IPA90R1K2C3 CoolMOS™ Power Transistor Features, the lowest figure-of-merit RON x Qg, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, Ultra low gate charge. CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS.

ICE3AS02 / ICE3BS02 ICE3AS02G / ICE3BS02G Off-Line SMPS Current Mode Controller with integrated 500V Startup Cell

The document describes the features and characteristics of IKW40T120 TrenchStop series power semiconductors. The device uses TrenchStop and Fieldstop technology and is equipped with a soft, fast recovery anti-parallel EmCon HE diode. It is designed for applications such as frequency converters and uninterrupted power supply. It offers very tight parameter distribution and high ruggedness with temperature stable behavior. The NPT technology allows for easy parallel switching due to positive temperature coefficient in VCE(sat). The device has low EMI, low gate charge, and a very soft, fast recovery anti-parallel EmCon HE diode. It is qualified according to JEDEC1 standards and is lead-free and RoHS compliant.

SDP10S30 and SDT10S30 are thinQ! SiC Schottky Diodes, which have revolutionary semiconductor material - Silicon Carbide. Their switching behavior is benchmark, no reverse recovery, no temperature influence on the switching behavior, and no forward recovery.

This document introduces a product called VDS, which has multiple features and characteristics, including temperature range, voltage, power, etc.

This document is a datasheet for the BTS 5235-2L Smart High-Side Power Switch, providing information about its features and characteristics.

This document is the P-TO220-3-31 MOSFET datasheet

This is a CoolMOSTM power transistor product with inherent fast recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv /dt rating, high peak current capability and other features.

This document describes the features and characteristics of the Power Management & Drives Control integrated Power System (CIPOS™) IKCS12F60AA product from Infineon Technologies.