INFINEON Manuals

This document is the datasheet of SPP24N60CFD CoolMOSTM power transistor. It details the characteristics and parameters of the product, including maximum current, maximum voltage, maximum power consumption, and maximum temperature.

BSP 373 is a high voltage, high speed, low on-resistance, N-channel power MOSFET. It has a very low gate threshold voltage (VGS(th) = 2.1V to 4.0V) and a high breakdown voltage (V(BR)DSS = 100V). The BSP 373 is suitable for a wide range of applications, including automotive, industrial, and consumer electronics.

BAV199 is a low-leakage diode with a maximum reverse voltage of 85V and medium switching speeds. It can be used for low-leakage applications.

BAR64 series are high voltage current controlled RF resistors suitable for RF attenuators and switches. This series has very low reverse bias capacitance, frequency range of 1MHz to 6GHz, very suitable for RF applications

BSS87 is an N-channel enhanced logic level MOSFET with a maximum voltage of 240V, RDS(on) of 6 ohms, a continuous current of 0.26A, and a dv/dt of 6kV/µs.

This document introduces the SPU03N60S5 and SPD03N60S5 Cool MOS™ power transistors of Rev. 2.4 released on October 5, 2005. These transistors feature new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

IPB50R199CP CoolMOSTM Power Transistor is a power transistor with the lowest RON x Qg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance.

The IPA50R350CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, RoHS compliance. It is qualified according to JEDEC standards. It is designed for hard and soft switching SMPS topologies, CCM PFC for notebook adapters, PDP and LCD TVs, and PWM for notebook adapters, PDP and LCD TVs.

This document describes the features and characteristics of SMBT2907A/MMBT2907A PNP silicon switching transistors, released on March 20, 2006. These features include high DC current gain, low collector-emitter saturation voltage, etc. The document also provides detailed information on maximum ratings, thermal resistance, and electrical characteristics.

SPW20N60CFD is a new type of high voltage power transistor with ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge.

This document is the characteristic parameter table of SPP80N06S2L-07 and SPB80N06S2L-07, including voltage, current, power, temperature, packaging and other information.

IPD90R1K2C3 CoolMOS™ Power Transistor features the lowest RON x Qg figure-of-merit, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC1) for target applications. It is Pb-free, lead plated, and RoHS compliant.

This document describes the features and characteristics of SIPMOS® power transistors, including N-channel, enhancement mode, and avalanche-rated.

ipa60r199cp is a power transistor with ultra-low gate charge, extreme dv/dt rating and high peak current capability.

SPP04N80C3 is a high voltage power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance. It is available in PG-TO220 package.