INFINEON Manuals

SPA11N60CFD CoolMOSTM power transistor features extremely low reverse recovery charge and ultra-low gate charge, extreme dv/dt rating and high peak current capability.

SPA11N60CFD is a new high voltage power transistor with an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, etc.

SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor features 650 V VDS, 0.38 RDS(on) and 11 A ID. Its features are new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.

This product is a high voltage power transistor with a maximum voltage of 800V and a maximum current of 11A. The product has the characteristics of ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance and improved transconductance.

SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new revolutionary high voltage MOS power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

The document introduces the features of four models of Cool MOS™ power transistors: SPP12N50C3, SPB12N50C3, SPI12N50C3, and SPA12N50C3, including new high voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, improved transconductance, and different package types and markings. The maximum ratings of each model are also listed, such as continuous drain current, pulsed drain current, avalanche energy, etc.

This is a PDF document about SPP15N60C3, SPI15N60C3 SPA15N60C3. It introduces the features and characteristics of this product, including maximum voltage, on-resistance, rated current, pulsed current, surge energy, surge current, gate source voltage, power consumption, operating temperature, etc.

SPP16N50C3, SPB16N50C3, SPI16N50C3, SPA16N50C3 are Cool MOS™ power transistors with features of new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

This document describes the features and characteristics of the SPP20N60C2, SPB20N60C2, and SPA20N60C2 Cool MOS™ power transistors produced by Dinghao, including new revolutionary high voltage technology, worldwide best RDS(on), ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, and ultra-low effective capacitances.

This datasheet provides the specifications of SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3, including maximum voltage, current, frequency, etc.

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 is a high-performance power transistor product provided by Dinghao Electronics. This product uses a new revolutionary high-voltage technology and has the best RDS(on) in the world, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, improved transconductance, and other characteristics. It is suitable for various high-voltage applications.