IPI60R250CP is a CoolMOSTM power transistor that features the lowest RONxQg figure-of-merit, ultra-low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications and is Pb-free lead plated; RoHS compliant.
The IPIGOR250CP is a CoolMOS power transistor designed for hard‑switching SMPS topologies. It offers a low figure‑of‑merit Ron·Qg, ultra‑low gate charge, high peak current capability and is RoHS‑compliant.
The document lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data and typical output characteristics, enabling designers to evaluate the device for high‑frequency power conversion applications.
| Continuous drain current (Id) at 25 °C | 12 A |
|---|---|
| Maximum pulsed drain current | 40 A |
| Drain‑source breakdown voltage (Vds) | 600 V |
| On‑state resistance (Rds(on)) typical at 25 °C | 0.22 Ω |
| Total gate charge (Qg) typical | 26 nC |
| Thermal resistance, junction‑to‑case | 1.2 K·W⁻¹ |
The device can conduct a continuous drain current of 12 A at 25 °C.
Typical Rds(on) is 0.22 Ω at 25 °C.
The drain‑source breakdown voltage is rated at 600 V.