SPB11N60S5 is a power transistor with a maximum voltage of 600V, a resistance of 0.38 ohms, and a current of 11 amps. This product has ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and improved transconductance features.
The SPB11N60S5 is a Cool MOS™ power transistor featuring ultra‑low gate charge, low effective capacitances and high voltage capability. It is qualified according to JEDEC for target applications and is offered in a PG‑TO263 (TO‑263) package.
Key specifications include a continuous drain current of 11 A at 25 °C, a drain‑source breakdown voltage of 600 V, and an on‑state resistance of 0.34‑0.38 mΩ. Thermal resistance values, capacitances, gate charge characteristics and typical output curves are detailed for design and reliability analysis.
| Continuous drain current (ID) at 25 °C | 11 A |
|---|---|
| Pulsed drain current (ID,pulse) | 22 A |
The maximum continuous drain current is 11 A at a case temperature of 25 °C.