Infineon IPA90R800C3 Datasheet

IPA90R800C3 CoolMOS™ Power Transistor has the lowest figure-of-merit RON x Qg and extreme dv/dt rating, as well as high peak current capability. It is qualified according to JEDEC1) for target applications, and it is lead-free and RoHS compliant.


Infineon IPA90R800C3 Datasheet - cover page
Brand
Infineon
Category
Other
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
266 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
92706DA37B39BED4688E0414A9C5ECAB

About this manual

The IPA90R800C3 is a CoolMOS 900 V power transistor designed for quasi‑resonant flyback, forward topologies, PC power supplies, consumer and industrial SMPS applications. It offers a low figure‑of‑merit Rds(on)·Qg, ultra‑low gate charge, high peak current capability and is RoHS compliant.

The document lists the device's electrical, thermal and dynamic characteristics, including maximum ratings such as 6.9 A continuous drain current, 900 V drain‑source breakdown voltage, 33 W power dissipation, and a junction‑to‑case thermal resistance of 3.8 K/W. Package dimensions for the PG‑TO220 FP outline are also provided.

What's inside

  • Features
  • Maximum ratings
  • Thermal characteristics
  • Electrical characteristics
  • Dynamic characteristics
  • Gate charge characteristics
  • Safe operating area
  • Typical output characteristics
  • Package dimensions
  • Legal disclaimer
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