This product is a high voltage MOS power transistor with very low RDS(on) and very low capacitance, as well as very high dv/dt capability and very low gate charge.
The SPP24N60C3 is a high‑voltage, low‑gate‑charge MOSFET offered by Infineon Technologies. It features a 600 V drain‑source breakdown voltage, ultra‑low gate charge, and a TO‑220 package suitable for power‑switching applications.
The document lists maximum ratings, thermal characteristics, detailed electrical parameters, and typical characteristic curves. It also includes mechanical dimensions, package outline, and safety notices for use in life‑support systems.
| Power dissipation (Tc = 25 °C) | 240 W |
|---|---|
| Package type | PG‑TO220 |
| Avalanche energy (single pulse) | 780 mJ |
It is supplied in a PG‑TO220 package.