INFINEON SPP07N60S5 SPI07N60S5 Manual

SPP07N60S5 and SPI07N60S5 are Cool MOS™ power transistors with revolutionary high voltage technology, world's smallest RDS(on) in TO-220 package, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, improved transconductance.


INFINEON SPP07N60S5 SPI07N60S5 Manual - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
796 KB
Published
06 April, 2012
Updated
01 October, 2023
MD5 checksum
B09D5FD6465503C71F3A68A8C941D44D

About this manual

The SPP07N60S5 is a Cool MOS™ power transistor from Infineon Technologies, offered in PG‑TO220 and PG‑TO262 surface‑mount packages. It features ultra‑low gate charge, low on‑state capacitances and is RoHS compliant.

Key specifications include a continuous drain current of 7.3 A, a drain‑source breakdown voltage of 600 V, power dissipation up to 83 W at 25 °C, and an operating temperature range of –55 °C to +150 °C. Thermal resistance values and detailed gate‑charge characteristics are also provided for design engineers.

What's inside

  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Gate Charge Characteristics
  • Typical Output Characteristics
  • Avalanche Energy
  • Package Dimensions
  • Safety and Warranty

Specifications

Power dissipation at 25 °C (Pd)83 W

Frequently asked questions

Which package types are available for this transistor?

It is offered in PG‑TO220 and PG‑TO262 surface‑mount packages.

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