STMicroelectronics manuals, page 289
ST USBLC6-4SC6 handbook
The USBLC6-4SC6 is a monolithic Application Specific Discrete dedicated to ESD protection of high speed interfaces, such as USB2.0, Ethernet links and Video lines. Its very low line capacitance secures a high level of signal integrity without compromising in protecting sensitive chips against the most stringent characterized ESD strikes.
ST USBLC6-2 handbook
USBLC6-2 is a very low capacitance ESD protection device designed for protection of high speed interfaces such as USB2.0, Ethernet links and Video lines. Its very low line capacitance secures a high level of signal integrity without compromising in protection sensitive chips against the most stringent characterized ESD strikes.
ST USBDFxxW5 handbook
USBDFxxW5 is a monolithic device with recommended line termination and ESD protection for USB downstream ports. It meets USB 1.1 standard and provides best EMI and ESD performance in a 50% smaller SOT323-5L package.
ST USB6Bx DATA LINES PROTECTION handbook
USB6Bx is a transient overvoltage protector designed to protect sensitive equipment, such as Universal Serial Bus ports, RS-423 interfaces, RS-485 interfaces, ISDN equipment, T1/E1 line cards, and HDSL/ADSL interfaces. The product features a full diode bridge with integrated clamping protection, a breakdown voltage of 6V, peak pulse power dissipation of 500W, and very low capacitance compatible with high data or signal rates.
ST DB-960-90W handbook
The DB-960-90W is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM/GPRS/EDGE base station applications. It has excellent thermal stability, operates in the frequency range of 925-960 MHz, with a minimum output power of 90 W and a gain of 13 dB. The amplifier is sized at 80 mm x 50 mm x 10 mm.
ST DB-960-70W handbook
This document introduces the DB-960-70W product, which is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications. The product features excellent thermal stability, common source configuration, a minimum output power of 70W and a gain of 13dB over the 925-960 MHz range, and a 10:1 load mismatch capability.
ST DB-960-60W handbook
DB-960-60W is a high gain broadband power amplifier designed by European Telecommunications and ETSA. It is rated at 26V, with a maximum current of 8A and a maximum power dissipation of 95W. The maximum operating temperature is +85℃.
ST DB-915-12W handbook
DB-915-12W is a common source N-channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM-R applications. It has high gain, broadband performance, operates at 12V, and can withstand load mismatch up to 10:1 with harmonics lower than 30dBc.
ST DB-900-80W handbook
This document describes the features and performance of the DB-900-80W RF power amplifier. The device uses N-channel enhancement-mode lateral MOSFET technology and is suitable for IS-54/-136 and IS-95 base station applications. It has excellent thermal stability, operates in the frequency range of 869-894 MHz, with a maximum output power of 80W and a gain of 13dB. The device also has a 10:1 load VSWR capability and harmonics lower than 30dBc.
ST DB-900-60W handbook
The DB-900-60W is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 and IS-95 base station applications. It features high gain and broadband performance, operating in common source mode at 26V, capable of withstanding 10:1 load mismatch and with harmonics lower than 30dBc.
ST DB-900-100W handbook
The DB-900-100W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. It has high gain and broadband performance, operates in common source mode at 26V, capable of withstanding load mismatch up to 10:1, and has harmonics lower than 30dBc.
ST DB-2933-54 handbook
The document describes an RF broadband power amplifier using 2x SD2933 N-channel enhancement-mode lateral MOSFETs. It has excellent thermal stability and operates over the frequency range of 1.6 to 54 MHz. The amplifier has a supply voltage of 48V, typical output power of 400W, and maximum input power of 10W. The efficiency is between 57% and 76%. The IMD at 300WPEP is less than -26dBc and the load mismatch is 3:1 for all phases.
ST SMP75-8 handbook
The SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telecommunication equipment against lightning strikes and other transients. It features a high repetitive surge capability, a very low stand-off voltage and a very low leakage current.
ST SMP30-xxx Series handbook(1)
ST AN ISOLATED GATE DRIVE FOR POWER MOSFETs AND IGBTs Application Note