DB-915-12W is a common source N-channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM-R applications. It has high gain, broadband performance, operates at 12V, and can withstand load mismatch up to 10:1 with harmonics lower than 30dBc.
The DB-915-12W is an N-channel enhancement-mode lateral Field-Effect RF power amplifier designed as a booster for GSM-R applications. It operates in common source mode at 12 V and features excellent thermal stability, BeO-free construction, and the capability to withstand load mismatch up to 10:1.
| Frequency Range | 875 - 915 MHz |
|---|---|
| Output Power (Pout) | 12 W min. |
| Gain | 12 dB |
| Supply Voltage (Vop) | 18 V max. |
| Drain Current (Ip) | 4.5 A |
| Load Mismatch Capability | 10:1 VSWR |
| Dimensions (L x W x H) | 60 mm x 30 mm x 10 mm |
It is designed as a booster for GSM-R applications.
The absolute maximum rating for supply voltage is 18 V.
Yes, it is a BeO free amplifier.