STMicroelectronics Manuals - Page 291

ManualLib has 6,003 STMicroelectronics manuals, in categories such as Anti-Theft Devices, Electronic Original. Every file can be read online or downloaded as a PDF for free.

STMicroelectronics manuals, page 291

  • ST AN1228 handbook

    This article introduces the characteristics of LDMOS technology and the relationship between LDMOS devices and RF performance. By understanding the parameters and characteristics of LDMOS devices, design engineers can better utilize these devices and effectively monitor the semiconductor manufacturing process.

  • ST AN1229 Application note handbook

    This application note describes a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.

  • ST AN1232 handbook

    This document describes the ruggedness improvement of RF DMOS devices, as well as the impedance mismatch issue between the output and load of RF power transistors. A theoretical model simulating the failure mode mechanism is proposed, and relevant corrective actions are undertaken.

  • ST AN1233 handbook

    LDMOS is a high-performance, low-power, high-density, chipless capacitor RF power amplifier

  • ST AN1256 handbook

    This application note introduces the latest addition to STMicroelectronics’ RF Power MOSFET family, the SD2933. The SD2933 is a single-ended, 50 V, 300 W, gold (Au) metallized, N-channel, vertical Power MOSFET, intended for use up to 150 MHz, with exceptionally high gain, and enhanced thermal packaging which makes it ideal for various applications including plasma generation, excitation and FM broadcast applications.

  • ST AN1294 handbook

    PowerSO-10RF is a new type of RF plastic package introduced by STMicroelectronics. It features excellent thermal performance, high power capability, high power density and suitability for all reflow soldering methods.

  • ST AN1316 handbook

    MDmesh™ is a revolutionary technology and a “conceptual” breakthrough in the high voltage power MOSFET area. It is named after the combination of a new vertical drain structure with STMicroelectronics’ well established Mesh Overlay™ layout.

  • ST AN2027 handbook

    This document provides mounting recommendations for ceramic packages used in the assembly of DMOS radio frequency transistors suitable for applications such as ISM and FM broadcasting.

  • ST AN1889 handbook

    This document describes the application of ESBT STC03DE170HV in a 3-phase auxiliary power supply. It discusses the theory and evolution of ESBTs, as well as the characteristics and requirements of this application.

  • ST AN1485 handbook

    Presents a new high voltage MOSFET structure which leads to static as well as dynamic performances far ahead conventional Power MOSFET devices. The impact of the particular features of the device is analyzed and quantified in a case study regarding a DC-DC boost converter, which is used in a power factor corrector (PFC) converter. Results obtained from the analysis of the electrical and thermal behavior of the component in the specific are discussed.

  • ST AN1387 APPLICATION NOTE handbook

    This application notes aims to outline the characteristics of a new power device that joins the peculiarities of an STMicroelectronics fast-switching PowerMESH™ IGBT with some novel protection features. A driver circuit is integrated in the power device to implement over-current protection and soft thermal shutdown. The current limitation also ensures a highly short-circuit rated device. Moreover the low threshold voltage and input current make it possible to drive the device directly from the output pin of a microprocessor. The static and dynamic behavior of the device will be illustrated and an application will be suggested.

  • ST AN1491 APPLICATION NOTE handbook

    This document introduces the structure and working principle of IGBTs, as well as their main static and dynamic characteristics. Furthermore, the behavior in operation is analyzed and discussed in more detail to provide a complete overview of the main parameters, features, and static and dynamic behaviors of this power component.

  • ST AN1506 APPLICATION NOTE handbook

    This paper introduces a new design method for low voltage power MOSFETs suitable for high current low voltage converter applications. It uses a new strip-based structure and presents interesting characteristics due to the advanced design rules typical of VLSI processes and strong reduction of the on-state resistance.

  • ST AN1597 APPLICATION NOTE handbook

    This paper presents an innovative technique for designing and manufacturing power electronic modules using high performance cost-effective IGBTs assembled in plastic package. This technique allows optimizing both the power switching devices and the converter, in terms of power handling, reliability and cost. This design is well adapted to mass production required by automotive applications.

  • ST AN1731 APPLICATION NOTE handbook

    This article introduces the topologies implemented in Emergency Lighting Applications and the use of STMicroelectronics' power bipolar transistors. STSA851 is a power bipolar transistor with high gain performance and low saturation voltage. It is suitable for the drive circuit of emergency lamps.