STMicroelectronics DB-900-100W RF Power Amplifier Preliminary Data Sheet

The DB-900-100W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. It has high gain and broadband performance, operates in common source mode at 26V, capable of withstanding load mismatch up to 10:1, and has harmonics lower than 30dBc.


STMicroelectronics DB-900-100W RF Power Amplifier Preliminary Data Sheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Product Leaflet
Language
English
Pages
6
File format
PDF
File size
307 KB
Published
06 August, 2012
Updated
28 September, 2023
MD5 checksum
0D58223C0E40F666C588236C0D31CD18

About this manual

The document describes the DB-900-100W, an RF power amplifier designed for IS-54/-136 and IS-95 base station applications. It is a common source configuration using two PD57060S transistors, operating at 26V with a minimum output of 100W and 13 dB gain over the 869-894 MHz frequency range.

What's inside

  • Description
  • Mechanical Specification
  • Absolute Maximum Ratings
  • Electrical Specification
  • Typical CDMA Performance
  • Test Fixture Component Layout
  • Component Part List

Specifications

Supply Voltage (Vop)32 V
Drain Current (Ip)12 A
Power Dissipation145 W
Operating Case Temperature Range-20 to +85 °C
Frequency Range869-894 MHz
Output Power (Pout)100 W min.
Gain13 dB
Load Mismatch Capability (VSWR)10:1

Frequently asked questions

What is the typical output power of the DB-900-100W?

The amplifier provides a minimum output power of 100 W.

Which applications is the DB-900-100W designed for?

It is designed for IS-54/-136 and IS-95 base station applications.

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