ST DB-900-80W handbook

This document describes the features and performance of the DB-900-80W RF power amplifier. The device uses N-channel enhancement-mode lateral MOSFET technology and is suitable for IS-54/-136 and IS-95 base station applications. It has excellent thermal stability, operates in the frequency range of 869-894 MHz, with a maximum output power of 80W and a gain of 13dB. The device also has a 10:1 load VSWR capability and harmonics lower than 30dBc.

Brand
STMicroelectronics
File format
PDF
Published
06 August, 2012
Updated
28 September, 2023
MD5 checksum
00349FCBD417D208C03910E716387875
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ST DB-900-80W handbook PDF
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