This document describes the features and performance of the DB-900-80W RF power amplifier. The device uses N-channel enhancement-mode lateral MOSFET technology and is suitable for IS-54/-136 and IS-95 base station applications. It has excellent thermal stability, operates in the frequency range of 869-894 MHz, with a maximum output power of 80W and a gain of 13dB. The device also has a 10:1 load VSWR capability and harmonics lower than 30dBc.
The document describes the DB-900-80W, a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier. It is designed for IS-54/-136 & IS-95 base station applications, operating at 26 V with high gain and broadband performance in a common source mode.
| Supply Voltage (VDD) | 32 V |
|---|---|
| Drain Current (ID) | 9 A |
| Power Dissipation | 135 W |
| Operating Case Temperature | -20 to +85 °C |
| Max. Ambient Temperature (Pamb) | +55 °C |
| Frequency Range | 869 - 894 MHz |
| Output Power (Pout) | 80 W min. |
| Gain | 13 dB |
It is designed for IS-54/-136 & IS-95 base station applications.
The electrical specification assumes a Vdd of 26V.
It can withstand a load mismatch up to 10:1 all phases.