STMicroelectronics DB-2933-54 RF Power Amplifier Datasheet

The document describes an RF broadband power amplifier using 2x SD2933 N-channel enhancement-mode lateral MOSFETs. It has excellent thermal stability and operates over the frequency range of 1.6 to 54 MHz. The amplifier has a supply voltage of 48V, typical output power of 400W, and maximum input power of 10W. The efficiency is between 57% and 76%. The IMD at 300WPEP is less than -26dBc and the load mismatch is 3:1 for all phases.


STMicroelectronics DB-2933-54 RF Power Amplifier Datasheet - cover page
Brand
STMicroelectronics
Category
amplifier
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
650 KB
Published
06 August, 2012
Updated
29 September, 2023
MD5 checksum
6AB31CDF3BEC65F8918161F6138E6C21

About this manual

The DB-2933-54 is an RF broadband power amplifier designed for linear or nonlinear operation over the 1.6 to 54 MHz frequency band. It utilizes two SD2933 N-channel enhancement-mode lateral MOSFETs and features a temperature compensating biasing circuit supporting Class B and Class AB operation. The device is designed in cooperation with Specific RF Devices.

What's inside

  • Electrical data
  • Maximum ratings
  • Electrical characteristics
  • Typical performance
  • Photos of DB-2933-54 amplifier
  • DB-2933-54 class of operation
  • SD2933 mounting recommendations
  • Package mechanical data

Specifications

Frequency range1.6 - 54 MHz
Supply voltage48V
Output power400W typ.
Input power10W max.
Efficiency57% - 76%
IMD at 300W PEP< -26dBc
Load mismatch3:1 all phases

Frequently asked questions

What is the maximum drain supply voltage?

The maximum drain supply voltage is 50V.

What is the maximum power dissipation?

The maximum power dissipation is 400W.

How is the bias point selected?

The bias point is selected via a control port named 'BIAS'.

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