STMicroelectronics DB-960-90W RF Power Amplifier Preliminary Data

The DB-960-90W is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM/GPRS/EDGE base station applications. It has excellent thermal stability, operates in the frequency range of 925-960 MHz, with a minimum output power of 90 W and a gain of 13 dB. The amplifier is sized at 80 mm x 50 mm x 10 mm.


STMicroelectronics DB-960-90W RF Power Amplifier Preliminary Data - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
303 KB
Published
06 August, 2012
Updated
29 September, 2023
MD5 checksum
651923CE61332D1E7285AF42881DF2DB

About this manual

The DB-960-90W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM/GPRS/EDGE base station applications. It is designed in cooperation with Europeenne de Telecomunications S.A. for high gain and broadband performance operating in common source mode at 26 V.

What's inside

  • Description
  • Mechanical Specification
  • Absolute Maximum Ratings
  • Electrical Specification
  • Typical Performance
  • Test Fixture Component Layout
  • Test Circuit Component Part List

Specifications

Frequency Range925 - 960 MHz
Output Power90 W min.
Gain13 dB
Load Mismatch Capability10:1
Supply Voltage32 V
Drain Current12 A
Operating Case Temperature-20 to +85 °C
Dimensions80 x 50 x 10 mm

Frequently asked questions

What is the minimum output power of the DB-960-90W amplifier?

The amplifier provides a minimum output power of 90 W.

What is the operating supply voltage for the DB-960-90W?

The device is designed to operate at a supply voltage of 26 V.

What is the maximum allowable load VSWR for the amplifier?

The amplifier can withstand a load mismatch up to 10:1.

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