STMicroelectronics Manuals - Page 293

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STMicroelectronics manuals, page 293

  • ST AN3161 Application note handbook

    This application note introduces the STGW35HF60WD 35 A, 600 V ultra fast PT IGBT and explains how to parallel this device in high power applications.

  • ST AN3232 Application note handbook

    This application note provides guidelines for mounting various types of STAC® packages in amplifiers or application boards (PCB) by means of bolting or by soldering. Specific attention is paid to the STAC244B and STAC265B boltdown styles and the STAC244F and STAC265F flangeless styles, which are used to encapsulate numerous VDMOS and LDMOS technology products.

  • ST AN3267 Application note handbook

    This application note presents the simulation and experimental test results on a single-phase synchronous buck converter, highlighting the power MOSFET gate driving voltage impact on converter power management and switching behavior.

  • ST AN3400 Application note handbook

    This document is AN3400 application note, which introduces the role of BJT complementary pair in self-oscillating resonant driving system in CFL lighting application

  • ST AN3973 Application note handbook

    This document describes the application of an electronic ballast using STD3N62K3 power MOSFET and STD845DN40 BJT devices. The electronic ballast features active power factor correction (PFC), optimized THD harmonic distortion, and electric efficiency.

  • ST AN3994 Application note handbook

    One of the bigger challenges of the 21st century is to deal with the growing need for power and, at the same time, the necessity of product compactness. The new MDmesh™ V series from STMicroelectronics, based on the super junction concept, meets these targets by offering an extremely low RDS(on) value in a given package, unobtainable in standard HV MOSFETs. In addition to the dramatic reduction of RDS(on), super junction MOSFETs are extremely fast in transients and this may lead to some issues when a better performing technology replaces an older version on the same board with the same driving network. The two main components in the ST super junction MOSFET family (MDmesh™ II and MDmesh™ V) are analyzed and compared in terms of energy losses, voltage, and current rates. It is shown how the external driving network impacts on their performances. Furthermore, a separate section is dedicated to the layout parasitic effects and their impact on MOSFET behavior. It is clear in the end that layout can be crucial, especially when managing very fast transients, and it must be carefully planned in order to help the MOSFET exploit its best potential.

  • ST AN4016 Application note handbook

    This application note reports on the design of a 2 kW-100 V, 123 MHz Class AB peak power amplifier (PPA) for 3 Tesla MRI applications. It almost doubles the output power of previous amplifiers using MOSFET transistors in standard ceramic packages. The design techniques and construction practices are described in enough detail to permit duplication of the amplifier.

  • ST AN2686 Application note handbook

    This document presents the general principle of LCD screens and the cause of flicker. It also proposes a solution of automatically minimizing flicker using the STVM100 (LCD VCOM calibrator).

  • ST AN3110 Application note handbook

    This application note briefly describes the basic principle of e-paper so that the user can understand the necessity of an accurate VCOM voltage setting and how the STVM100 can be used for this purpose.

  • ST AN392 Application note handbook

    This application note describes two different MCU based applications: a universal motor drive, and a light dimmer.

  • ST AN302 Application note handbook

    Describes how to measure the holding current of thyristors and triacs.

  • ST AN303 Application note handbook

    This application note introduces the concepts of gate current (IG) and holding current (IL) for thyristors (SCRs) and triacs. Also provided are procedures for measuring IG and IL, and a discussion of the variation of IL with operating conditions and device sensitivity.

  • ST AN307 APPLICATION NOTE handbook

    This article mainly introduces the phenomena that may occur in the circuit when controlling the AC power source using the triac, and how to avoid these phenomena by controlling the trigger mode of the triac to ensure the normal operation of the circuit.

  • ST AN308 APPLICATION NOTE handbook

    AN308 is ST's application note, which introduces how to use TRIAC to control inductive loads, including the introduction and analysis of different control methods, and finally proposes a simple and reliable control circuit.

  • ST AN439 Application note handbook

    This article describes the features and characteristics of logic level and Snubberless TRIACs, and their current commutation capabilities when turned off.