STMicroelectronics Manuals - Page 290

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STMicroelectronics manuals, page 290

  • ST A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL Application Note(1)

    This document is the operation manual for the T9i Treadmill, which mainly introduces the functions and usage methods of the equipment

  • ST ELECTRONIC FLUORESCENT LAMP BALLAST Application Note

    This manual describes the operation methods of FP+ series Dedicated Touring Amplifiers

  • ST SMP30-xxx Series handbook

    The SMP30-xxx series is a bidirectional crowbar protection device with a rated voltage range of 62V to 270V. It has a minimum holding current of 150mA and a 30A 10/1000µs repetitive peak pulse current. The series uses a JEDEC registered SMA (JEDEC DO-214AA) package. The SMP30-xxx series has been designed to protect telecommunications equipments against lightning surges and overvoltages induced by AC power lines.

  • ST SMP30-xxx handbook

    The SMP30-xxx series is a bidirectional crowbar protection device designed to protect telecommunication equipment against lightning and transients induced by AC power lines. The package / die size ratio has been optimized by using the SMA package.

  • ST INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR Application Note(1)

    This document is the user guide for AATON XTRprod, providing information on the features and characteristics of the product.

  • ST PULSE CONTROLLED INVERTER Application Note

    The document introduces the features and characteristics of the MOVICAM COMPACT camera system.

  • ST AN INTRODUCTION TO IGBTS Application Note

    HD ELECTRONIC VIEWFINDER HDVF-C35W is an electronic viewfinder produced by Sony Corporation. It has features such as diopter adjustment, screen adjustment, cleaning the display screen, and using the menu.

  • ST CALCULATION OF THE LOSSES IN A CHOPPER TOPOLOGY APPLICATION NOTE

  • ST IGBTS IN RESONANT CONVERTERS APPLICATION NOTE

    This document introduces the characteristics of IGBTs in resonant converters, and how to select IGBTs

  • ST TOPOLOGIES FOR SWITCHED MODE POWER SUPPLIES APPLICATION NOTE

    This paper introduces the most important DC-DC converter topologies, including non-isolated buck, boost, buck-boost topologies, and isolated buck, boost, buck-boost topologies.

  • ST CAR IGNITION WITH IGBTS APPLICATION NOTE

    This document introduces the application of IGBT in automotive ignition system, and introduces the characteristics of IGBT and the advantages of using IGBT in automotive ignition system.

  • ST A COST EFFECTIVE ULTRA FAST Ni-Cd BATTERY CHARGER APPLICATION NOTE

    This application note describes a highly efficient 100kHz converter that can charge a Ni-Cd battery in 30 minutes. Battery charging is monitored by a low cost microcontroller (ST6210) that provides battery voltage identification, temperature monitoring and charge control.

  • ST AN1223 APPLICATION NOTE handbook

    This document discusses the differences between LDMOS and bipolar technology, and compares their parameters and performances. LDMOS is a type of field effect transistor (FET) with advantages over bipolar junction transistors (BJTs) including thermal stability, frequency stability, higher gain, higher ruggedness, lower noise, lower feedback capacitance, simpler bias circuitry, constant input impedance, better IMD performance, lower thermal resistance, and better AGC capability.

  • ST AN1224 APPLICATION NOTE handbook

    This application note documents the feasibility of a low cost 900 MHz cellular device as a commercial FM driver. The device uses the STMicroelectronics product SD57045 LDMOS RF transistor. LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency, linearity, and biasing simpleness that lower the overall system cost and make them attractive for high volume businesses demanding low cost RF power transistor solutions.

  • ST AN1226 handbook

    This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the RF MOSFET device technology and the challenges that exist to improve their RF performance and reliability.