This document introduces the DB-960-70W product, which is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications. The product features excellent thermal stability, common source configuration, a minimum output power of 70W and a gain of 13dB over the 925-960 MHz range, and a 10:1 load mismatch capability.
The DB-960-70W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications. It operates at 26 V and provides high gain with broadband performance, capable of withstanding load mismatch up to 10:1 across all phases while maintaining harmonics lower than 30 dBc.
The document includes mechanical specifications (80mm x 50mm x 10mm), absolute maximum ratings such as a supply voltage of 32 V and operating case temperature from -20°C to +85°C. It also details electrical performance including frequency range, gain, output power flatness, input return loss, and spurious emissions under various test conditions.
| Product Type | N-Channel Enhancement-Mode Lateral MOSFET RF Power Amplifier |
|---|---|
| Operating Frequency Range | 925 - 960 MHz |
| Output Power (Typical) | 70 W min. |
| Supply Voltage | 26 V |
| Load Mismatch Capability | 10:1 VSWR all phases |
| Harmonics Performance | < 30 dBc |
| Operating Case Temperature | -20 to +85 °C |
It is a common source N-channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications.
The device operates at 26 V with a case temperature range of -20 to +85 °C.
The amplifier provides a minimum of 70 W over the 925-960 MHz frequency range.