The document describes the features and characteristics of the products.
This document is a datasheet for the Fairchild FQB19N20 and FQI19N20, which are 200V N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high efficiency switching applications such as DC/DC converters, switch mode power supplies, and motor control.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 19.4 A |
| On-State Resistance | 0.152 Ohm |
| Total Gate Charge | 31 nC |
| Operating Temperature Range | -55 to +150 °C |
| Power Dissipation (Tc = 25°C) | 140 W |