FQI12P20 is a 200V P-Channel MOSFET with low gate charge, low Crss, fast switching, 100% avalanche tested and improved dv/dt capability
This document provides technical specifications for the FQB12P20 and FQI12P20, which are 200V P-Channel enhancement mode power MOSFETs produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance in high efficiency DC/DC converters.
| Drain-Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | -15 A |
| Power Dissipation (Ta = 25°C) | * 3.13 Ww |
| Operating and Storage Temperature Range | -55 to +150 °C |