This document provides the characteristics of FQB11P06 / FQI11P06 60V P-Channel MOSFET, including technology principle, application scenarios, performance parameters, etc.
This document is a datasheet for the Fairchild Semiconductor FQB11P06 and FQI11P06, which are 60V P-Channel enhancement mode power field effect transistors. These devices utilize a proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance for applications such as automotive systems and DC/DC converters.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal characteristics, and typical performance curves. It covers parameters such as drain-source voltage, continuous and pulsed drain current, gate charge, and switching times. Additionally, the document includes mechanical dimensions for the D2-PAK and I2-PAK package types. This manual is written in Chinese.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | -11.4 A |
| Continuous Drain Current (TC = 100°C) | -8.05 A |
| Pulsed Drain Current | -45.6 A |
| Maximum Junction Temperature | 175°C |
| Thermal Resistance Junction-to-Case | 2.85 °C/W |
The device supports a continuous drain current of -11.4 A when the case temperature is 25°C.
These devices have a maximum junction temperature rating of 175°C.
When mounted on the recommended minimum pad size, the power dissipation is 53 W at a case temperature of 25°C.