Fairchild Manuals

FDS8690 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. Its rated voltage is 30V and its rated current is 14A. Its maximum on-resistance is 7.6mΩ. This MOSFET uses high-performance trench technology, which provides extremely low on-resistance and fast switching speed. It also has extremely low gate charge, high power and current handling capability, and has been 100% RG tested and complies with RoHS standards.

FDS86540 N-Channel PowerTrench® MOSFET is a MOSFET from FAIRCHILD, which has high performance trench technology, extremely low rDS(on), high power and current handling capability, and is widely used in surface mount packages.

The FDS8638 N-Channel PowerTrench® MOSFET is a high-performance N-channel MOSFET with extremely low on-state resistance. It has a maximum drain-source voltage of 40 V and a maximum drain-source current of 18 A. The maximum switching loss is 2.5 W. This device is manufactured using Fairchild Semiconductor's advanced Power Trench® process, which provides high reliability and low power consumption. It is suitable for applications such as synchronous rectifiers and load switches.

FDS86252 is an N-Channel Power Trench® MOSFET with a maximum on-state resistance of 55mΩ and a maximum drain current of 4.5A. It utilizes high-performance trench technology for extremely low on-state resistance and high power and current handling capability. It is widely used in DC-DC conversion MOSFET applications.

This document describes the features and characteristics of the FDS86242 N-Channel PowerTrench MOSFET, including maximum on-resistance, high-performance trench technology, high power and current handling capability, etc.

The FDS86240 N-Channel PowerTrench® MOSFET is a high-performance MOSFET with a maximum resistance of 19.8 mΩ, a working voltage of 150 V, and a maximum current of 7.5 A

The FDS86141 is a N-channel PowerTrench® MOSFET with a maximum RDS(on) of 23 m, a maximum rated voltage of 100 V, and a maximum current of 7 A. The product is produced using Fairchild Semiconductor's advanced PowerTrench® process and offers ultra-low RDS(on) and superior switching performance.

FDS86140 N-Channel PowerTrench® MOSFET is a high performance N-channel MOSFET with extremely low on-resistance and high power and current handling capability. It is manufactured using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

This document introduces the FDS8449 40V N-Channel PowerTrench® MOSFET product released by Fairchild Semiconductor Corporation in December 2005. The product is produced using Fairchild's advanced PowerTrench process, which minimizes on-state resistance and maintains superior switching performance. It is mainly used in inverters and power supplies.

The FDS8447 is a single N-channel power trench MOSFET produced by Fairchild Semiconductor Corporation. It uses the advanced PowerTrench® process, which has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. It is suitable for DC-DC conversion applications.

This document describes the features and characteristics of the FDS8433A P-Channel MOSFET, including low on-state resistance, fast switching speed, high density cell design, and high power handling capability.

FDS6994S is a dual channel synchronous DC/DC power supply chip that uses N-channel PowerTrench MOSFETs and integrates Schottky diodes. It has the characteristics of low on-resistance and low switching loss.

The FDS6990AS is a dual N-channel power MOSFET from Fairchild Semiconductor. It has a maximum current of 7.5A, a maximum voltage of 30V, a typical on-resistance of 22mOhm, and a typical gate capacitance of 10nC. It is suitable for applications such as DC/DC converters and motor drives.