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FDS6898A is a dual N-channel logic level PWM optimized PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance, low gate charge, high performance trench technology and high power and current handling capability.
The FDS6898AZ is a dual N-channel logic level PWM optimized PowerTrench MOSFET manufactured by Fairchild Semiconductor Corporation. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6900AS is a dual N-channel PowerTrench SyncFET from Fairchild Semiconductor. It features a high power conversion efficiency and is suitable for use in DC:DC power supplies for notebooks and other battery powered electronic devices.
FDS6910 is a dual N-channel logic level PowerTrench MOSFET produced by Fairchild Semiconductor using an advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
This document describes the features and characteristics of the FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET produced by Fairchild Semiconductor. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The FDS6912 is a dual N-channel logic level PWM optimized PowerTrench MOSFET featuring faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
FDS6930A is a Fairchild Semiconductor N-Channel Logic Level MOSFET produced using the PowerTrench process, which has low on-resistance and superior switching performance. The device is suitable for low-voltage and battery-powered applications where low line loss and fast switching are required.
The FDS6930B is a dual N-channel logic level power MOSFET with a rating of 5.5A, 30V. It features fast switching speed, low gate charge, and high performance trench technology.
FDS6961A is a N-Channel Logic Level MOSFET produced by Fairchild Semiconductor, which features low on-state resistance, high performance and fast switching, suitable for low voltage and battery powered applications
FDS6975 is a dual P-channel logic level MOSFET produced by Fairchild Semiconductor. It is made using the advanced PowerTrench process, which has extremely low on-state resistance and low gate charge, making it ideal for notebook computer applications such as load switching and power management, battery charging circuits, and DC/DC conversion.
The FDS6982AS is a device designed to replace two single SO-8 MOSFETs and a Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery-powered electronic devices. It contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses, while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
The FDS6986AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
The FDS6990AS is a dual N-channel power MOSFET from Fairchild Semiconductor. It has a maximum current of 7.5A, a maximum voltage of 30V, a typical on-resistance of 22mOhm, and a typical gate capacitance of 10nC. It is suitable for applications such as DC/DC converters and motor drives.
