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The FDS6986AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
The FDS6982AS is a device designed to replace two single SO-8 MOSFETs and a Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery-powered electronic devices. It contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses, while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
FDS6975 is a dual P-channel logic level MOSFET produced by Fairchild Semiconductor. It is made using the advanced PowerTrench process, which has extremely low on-state resistance and low gate charge, making it ideal for notebook computer applications such as load switching and power management, battery charging circuits, and DC/DC conversion.
FDS6961A is a N-Channel Logic Level MOSFET produced by Fairchild Semiconductor, which features low on-state resistance, high performance and fast switching, suitable for low voltage and battery powered applications
The FDS6930B is a dual N-channel logic level power MOSFET with a rating of 5.5A, 30V. It features fast switching speed, low gate charge, and high performance trench technology.
FDS6930A is a Fairchild Semiconductor N-Channel Logic Level MOSFET produced using the PowerTrench process, which has low on-resistance and superior switching performance. The device is suitable for low-voltage and battery-powered applications where low line loss and fast switching are required.
The FDS6912 is a dual N-channel logic level PWM optimized PowerTrench MOSFET featuring faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
This document describes the features and characteristics of the FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET produced by Fairchild Semiconductor. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6910 is a dual N-channel logic level PowerTrench MOSFET produced by Fairchild Semiconductor using an advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6900AS is a dual N-channel PowerTrench SyncFET from Fairchild Semiconductor. It features a high power conversion efficiency and is suitable for use in DC:DC power supplies for notebooks and other battery powered electronic devices.
The FDS6898AZ is a dual N-channel logic level PWM optimized PowerTrench MOSFET manufactured by Fairchild Semiconductor Corporation. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6898A is a dual N-channel logic level PWM optimized PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance, low gate charge, high performance trench technology and high power and current handling capability.
The FDS6894AZ is a logic level N-channel power MOSFET from Fairchild Semiconductor that is produced using the company's advanced PowerTrench process. The product features very low RDS(ON) and superior switching performance, making it ideal for low voltage and battery powered applications where low in-line power loss and fast switching are required.
