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FDS6679 is a 30 volt P-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It features faster switching speed and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. It is suitable for DC/DC converters, synchronous or conventional switching PWM controllers, and battery chargers.
This document describes the FDS6679AZ P-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. This product is manufactured using Fairchild Semiconductor's advanced PowerTrench process, which is specifically designed to minimize on-state resistance. It is suitable for power management and load switching applications common in notebook computers and portable battery packs.
This document introduces the FDS6680A model of N-channel logic level MOSFET produced by Fairchild Semiconductor. The device is produced using advanced power trench process to minimize on-state resistance and maintain superior switching performance. It is suitable for low voltage and battery powered applications requiring low in-line power loss and fast switching.
The FDS6680AS is a 30V N-Channel PowerTrench® SyncFET™ MOSFET from Fairchild Semiconductor Corporation, designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC/DC power supplies. It provides high power conversion efficiency and features low RDS(ON) and low gate charge.
The FDS6681Z is a 30V P-channel PowerTrench® MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
The FDS6682 is a 30V N-Channel PowerTrench MOSFET specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
FDS6690A is a single N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation using PowerTrench process, which has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6690AS 30V N-Channel PowerTrench® SyncFET™ is a high performance field effect transistor with low RDS(ON) and low gate charge. It includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
The FDS6699S is a 30V N-channel power transistor from Fairchild Semiconductor. It features extremely low R DS(ON) and fast switching speed, and can be used in synchronous DC/DC power supplies.
The FDS6875 is a dual P-channel 2.5V specified PowerTrenchTM MOSFET from Fairchild Semiconductor that features extremely low RDS(ON) and low gate charge, making it well suited for portable electronics applications such as load switching and power management, battery charging and protection circuits.
FDS6890A is a dual N-channel 2.5V specified MOSFET manufactured by Fairchild Semiconductor. It uses the PowerTrench process and has extremely low RDS(ON) and low gate charge, which enables fast switching speed and high power and current handling capability.
This document describes the FDS6892A dual-channel N-channel logic level PWM optimized PowerTrench MOSFET produced by Fairchild Semiconductor. These MOSFETs are made using the advanced PowerTrench process to minimize on-state resistance and maintain superior switching performance. They are well suited for low voltage and battery-powered applications that require low in-line power loss and fast switching.
The FDS6894AZ is a logic level N-channel power MOSFET from Fairchild Semiconductor that is produced using the company's advanced PowerTrench process. The product features very low RDS(ON) and superior switching performance, making it ideal for low voltage and battery powered applications where low in-line power loss and fast switching are required.
