Fujitsu MBM90 Manuals

MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. The device is offered in a 48-pin TSOP (I) and 63-ball FBGA packages.

This datasheet introduces the features and characteristics of MBM29PL3200TE/BE, including package, maximum random address access time, maximum page address access time, maximum CE access time, maximum OE access time, etc.

This datasheet provides detailed information on MBM29PL160TD-75/-90/MBM29PL160BD-75/-90's features and functions, such as single 3.0 V read, program and erase, compatibility with JEDEC standard commands, compatibility with MASK ROM pinouts, minimum 100,000 program/erase cycles, high performance 25 ns maximum page access time (75ns maximum random access time), 8 words page read mode function, sector erase architecture, embedded erase algorithms, embedded program algorithms, data polling and toggle bit feature, Ready/Busy output (RY/BY) hardware method, automatic sleep mode and low VCC write inhibit.

This document describes the features and characteristics of Fujitsu Semiconductor's flash memory storage product, including the use of 0.23μm process technology, support for simultaneous read/write operations, single 3.0V power supply, compatibility with JEDEC standard commands, and worldwide pinout compatibility.