Key facts
- Brand
- Fujitsu
- Model
- MBM90
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-06-06
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FUJITSU MBM29LV320TE80/90/10 MBM29LV320BE80/90/10 Manual
This document is a datasheet for the Fujitsu MBM29LV320TE/BE series of 32 M-bit CMOS Flash memory devices. The device is organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each and operates with a single 3.0 V power supply, eliminating the need for higher voltages during write or erase operations.
The MBM29LV320TE/BE features sector erase architecture allowing individual sectors to be erased without affecting others, along with embedded algorithms for programming and erasing. It is available in 48-pin TSOP (I) and 63-ball FBGA packages and offers access times of 80 ns, 90 ns, or 100 ns.
Fujitsu MBM90 specifications
| Memory Capacity | 32 M-bit (4 M x 8/2 M x 16) |
|---|---|
| Power Supply Voltage | 3.0 V only |
| Max Access Time (80ns model) | 80 ns |
| Min Program/Erase Cycles | 100,000 cycles |
| Packages | 48-pin TSOP (I) and 63-ball FBGA |
Source: FUJITSU MBM29LV320TE80/90/10 MBM29LV320BE80/90/10 Manual
All Fujitsu MBM90 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the access time for the MBM29LV320TE/BE?
The device offers access times of 80 ns, 90 ns, and 100 ns depending on the specific part number.
From: FUJITSU MBM29LV320TE80/90/10 MBM29LV320BE80/90/10 Manual
Does this Flash memory require high voltage for programming?
No, it is designed to be programmed in-system with the standard system 3.0 V Vcc supply.
From: FUJITSU MBM29LV320TE80/90/10 MBM29LV320BE80/90/10 Manual
Does this flash memory require high voltage for programming?
No, the device is designed to be programmed using a standard 3.0 V supply without requiring 12.0 V or 5.0 V.
Can individual sectors be erased independently?
Yes, the sector erase architecture allows each sector to be erased and reprogrammed without affecting other sectors.
What is the maximum access time for the MBM29DL16XTE/BE devices?
The devices are available with maximum address access times of 70 ns, 90 ns, or 120 ns depending on the part.
From: Fujitsu MBM29DL16XTE/BE-70/90/12 Flash Memory Datasheet
How many program/erase cycles can the flash memory endure?
Each device is rated for a minimum of 100 000 program/erase cycles.
From: Fujitsu MBM29DL16XTE/BE-70/90/12 Flash Memory Datasheet