Fujitsu MBM12 Manuals

ManualLib has 2 documents for the Fujitsu MBM12: 1 datasheet, 1 user manual. Every file can be read online or downloaded as a PDF for free.

Datasheet 1User Manual 1

Key facts

Brand
Fujitsu
Model
MBM12
Industry
Industrial
Documents
2
Languages
EN
Last added
2012-06-04

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FUJITSU FLASH MEMORY CMOS 8 M (1 M 8/512 K 16) BIT MBM29SL800TD/BD-10/12

FUJITSU FLASH MEMORY CMOS 8 M (1 M 8/512 K 16) BIT MBM29SL800TD/BD-10/12

Datasheet 56 pages · 282 KB · EN

The MBM29SL800TD/BD flash memory provides 8 M‑bit capacity, organized as either 1 Mbyte × 8 or 512 Kwords × 16. It operates on a single 1.8 V supply for read, program and erase functions and includes a low‑Vcc detector for power‑loss protection.

The device is supplied in 48‑pin TSOP, 48‑ball FBGA and 48‑ball SCSP packages, supports JEDEC‑standard commands, and features a sector‑erase architecture with a minimum of 100 000 program/erase cycles. Access times are up to 100 ns with separate CE, WE and OE controls.

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Fujitsu MBM12 specifications

Capacity8 M‑bit (1 Mbyte × 8 or 512 Kwords × 16)
Supply Voltage1.8 V
Maximum Access Time100 ns
Maximum CE Access Time100 ns
Maximum OE Access Time35 ns
Program/Erase Cycle Endurance≥ 100 000 cycles
Package Options48‑pin TSOP, 48‑ball FBGA, 48‑ball SCSP

Source: FUJITSU FLASH MEMORY CMOS 8 M (1 M 8/512 K 16) BIT MBM29SL800TD/BD-10/12

All Fujitsu MBM12 documents by type

Datasheet 1

Ratings, dimensions and ordering codes, for selection and design work.

Questions answered in these manuals

What supply voltage does the MBM29SL800TD/BD operate at?

It operates with a single 1.8 V supply for read, program and erase functions.

From: FUJITSU FLASH MEMORY CMOS 8 M (1 M 8/512 K 16) BIT MBM29SL800TD/BD-10/12

What is the maximum address access time of the device?

The maximum address access time is 100 ns (CE 100 ns, OE 35 ns).

From: FUJITSU FLASH MEMORY CMOS 8 M (1 M 8/512 K 16) BIT MBM29SL800TD/BD-10/12

What is the maximum access time for the MBM29DL16XTE/BE devices?

The devices are available with maximum address access times of 70 ns, 90 ns, or 120 ns depending on the part.

From: Fujitsu MBM29DL16XTE/BE-70/90/12 Flash Memory Datasheet

How many program/erase cycles can the flash memory endure?

Each device is rated for a minimum of 100 000 program/erase cycles.

From: Fujitsu MBM29DL16XTE/BE-70/90/12 Flash Memory Datasheet