This datasheet introduces the features and characteristics of MBM29PL3200TE/BE, including package, maximum random address access time, maximum page address access time, maximum CE access time, maximum OE access time, etc.
The MBM29PL3200TE/BE is a 32 M-bit Page Mode Flash Memory organized as 2 M words of 16 bits or 1 M words of 32 bits. It features single 3.0 V operation for read, program, and erase functions, eliminating the need for higher voltages during write operations.
The device is available in 90-pin SSOP and 84-ball FBGA packages. Key features include a sector erase architecture allowing individual sectors to be erased without affecting others, embedded algorithms for programming and erasing, and compatibility with JEDEC-standard commands.
| Memory Capacity | 32 M-bit (2 M x 16 or 1 M x 32) |
|---|---|
| Operating Voltage | 3.0 V only |
| Max Random Access Time (70ns) | 70 ns |
| Min Program/Erase Cycles | 100,000 cycles |
| Package Types | 90-pin SSOP and 84-ball FBGA |
No, the device is designed to be programmed using a standard 3.0 V supply without requiring 12.0 V or 5.0 V.
Yes, the sector erase architecture allows each sector to be erased and reprogrammed without affecting other sectors.
It is command set compatible with JEDEC standard EPROMs, using the same software commands.