Key facts
- Brand
- ASI
- Model
- ULBM2
- Category
- Other Electronics
- Documents
- 5
- Languages
- EN
- Last added
- 2012-06-11
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ASI ULBM2 NPN Silicon RF Power Transistor Datasheet
This document is a datasheet for the ASI ULBM2, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is packaged in a .280 4L stud style and is identified by the order code ASI10675.
The datasheet provides maximum ratings for collector current, voltages, and power dissipation, along with operating temperature ranges. It also lists specific electrical characteristics including breakdown voltages, current gain, and capacitance values under defined test conditions.
ASI ULBM2 specifications
| Package Style | .280 4L STUD |
|---|---|
| Metalization System | Omnigold™ |
| Collector Current (Ic) | 0.75A |
| Collector-Emitter Voltage (Vceo) | 16V |
All ASI ULBM2 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current rating for the ASI ULBM2?
The maximum collector current is 0.75A.
What is the maximum power dissipation at 25°C?
The maximum power dissipation is 5 W at 25°C.
What is the maximum collector-emitter voltage rating for this transistor?
The maximum collector-emitter voltage (Vceo) is rated at 16 V.
How much power can the device dissipate when the case temperature is 25°C?
The maximum power dissipation (Pss) is 5 W at a case temperature of 25°C.
What is the maximum continuous collector current for the ASI ULBM2SL transistor?
The maximum continuous collector current is 0.75 A.
What is the maximum power dissipation of the ULBM2SL at a case temperature of 25 °C?
The maximum power dissipation is 5.0 W at a case temperature of 25 °C.