This document is a technical datasheet of ASI ULBM2T, which introduces the features and characteristics of the product, including maximum rated current, maximum rated voltage, maximum rated power, etc.
This document is a datasheet for the ASI ULBM2T, an NPN silicon RF power transistor designed for specific applications. The device utilizes the Omnigold™ Metalization System and is packaged in the TO-39 style.
The datasheet provides maximum ratings and electrical characteristics, including collector-emitter voltage (Vceo) of 16V, power dissipation (Po) of 5W at 25°C, and operating temperature ranges from -65°C to +200°C.
| Package Style | TO-39 |
|---|---|
| Maximum Collector-Emitter Voltage (Vceo) | 16 V |
| Operating Temperature Range | -65°C to +200°C |
| Storage Temperature Range | -65°C to +150°C |
| Collector-Emitter Breakdown Voltage (BVceo) | 16 V |
| Collector-Base Breakdown Voltage (BVcbo) | 36 V |
The maximum collector-emitter voltage (Vceo) is rated at 16 V.
The maximum power dissipation (Pss) is 5 W at a case temperature of 25°C.
The input capacitance (Cie) measures typically 10 pF when Voe is 12 V.