Key facts
- Brand
- ASI
- Model
- ULBM2T
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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ASI ULBM2T NPN Silicon RF Power Transistor Datasheet
This document is a datasheet for the ASI ULBM2T, an NPN silicon RF power transistor designed for specific applications. The device utilizes the Omnigold™ Metalization System and is packaged in the TO-39 style.
The datasheet provides maximum ratings and electrical characteristics, including collector-emitter voltage (Vceo) of 16V, power dissipation (Po) of 5W at 25°C, and operating temperature ranges from -65°C to +200°C.
ASI ULBM2T specifications
| Package Style | TO-39 |
|---|---|
| Maximum Collector-Emitter Voltage (Vceo) | 16 V |
| Operating Temperature Range | -65°C to +200°C |
| Storage Temperature Range | -65°C to +150°C |
| Collector-Emitter Breakdown Voltage (BVceo) | 16 V |
| Collector-Base Breakdown Voltage (BVcbo) | 36 V |
Source: ASI ULBM2T NPN Silicon RF Power Transistor Datasheet
All ASI ULBM2T documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector-emitter voltage rating for this transistor?
The maximum collector-emitter voltage (Vceo) is rated at 16 V.
How much power can the device dissipate when the case temperature is 25°C?
The maximum power dissipation (Pss) is 5 W at a case temperature of 25°C.
What is the maximum collector current rating for the ULBM2TE transistor?
The maximum collector current rating is 0.40A.
What is the maximum power dissipation at a case temperature of 25°C?
The maximum power dissipation is 5W at a case temperature of 25°C.