Key facts
- Brand
- ASI
- Model
- TVV014
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
Start here
ASI TVV014 NPN Silicon RF Power Transistor Datasheet
The ASI TVV014 is an NPN silicon RF power transistor designed for specific applications, featuring the Omnigold™ Metalization System. It is packaged in a .500 6L FLG style and is manufactured by Advanced Semiconductor, Inc.
The document provides maximum ratings including a collector-emitter voltage of 60 V and a power dissipation of 140 W. It also lists typical electrical characteristics such as a power gain of 13.5 to 14.5 dB at 225 MHz and a cutoff frequency of 100 MHz.
ASI TVV014 specifications
| Package Style | 500 GL FLG |
|---|---|
| Metalization System | Omnigold™ |
| Collector-Base Breakdown Voltage (VcBo) | 60 V |
| Emitter-Base Breakdown Voltage (VeBo) | 4.0 V |
| Power Dissipation (Pd) @ Te = 25 °C | 14 W |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
| Thermal Resistance (Bic) | 1.5°C/W |
Source: ASI TVV014A NPN Silicon RF Power Transistor Datasheet
All ASI TVV014 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum power dissipation rating for the ASI TVV014?
The maximum power dissipation is 140 W.
What is the typical power gain of the ASI TVV014 at 225 MHz?
The typical power gain is 14.5 dB.
What is the operating frequency for the typical power output?
The typical power output of 14 dB is measured at a frequency of 225 MHz.