Key facts
- Brand
- ASI
- Model
- TVV030
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
Start here
ASI TVV030 NPN Silicon RF Power Transistor Datasheet
The ASI TVV030 is an NPN silicon RF power transistor designed for use in radio frequency applications. It features the Omnigold™ Metalization System and is packaged in a .500 6L FLG style.
Key electrical characteristics include a collector-emitter breakdown voltage (BVceo) of 30 V and a maximum power dissipation of 150 W at a case temperature of 25°C. The device operates over a temperature range of -65°C to +200°C.
ASI TVV030 specifications
| Package Style | .500 6L FLG |
|---|---|
| Collector-Emitter Breakdown Voltage | 30 V |
| Maximum Collector Current | 15 A |
| Power Gain | 7.5 dB |
| Input Capacitance | 150 pF |
Source: ASI TVV030 NPN Silicon RF Power Transistor Datasheet
All ASI TVV030 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the ASI TVV030 transistor designed for?
The ASI TVV030 is an NPN silicon RF power transistor designed for use in a .500 6L FLG package style.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage rating is 60 V.
What is the maximum power dissipation at a temperature of 25 °C?
The maximum power dissipation is 150 W at 25 °C.
What is the operating temperature range for the device?
The operating temperature range is from -65 °C to +200 °C.