Key facts
- Brand
- ASI
- Model
- HF220-50
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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ASI HF220-50 NPN Silicon RF Power Transistor Datasheet
The ASI HF220-50 is an NPN silicon RF power transistor designed for high linearity Class AB power amplifier applications operating up to 30 MHz. Key features include a typical power gain of 14 dB at 220 W/30 MHz and an intermodulation distortion (IMD3) of -32 dBc typical at 220 W PEP. The device utilizes the Omnigold™ Metalization System.
Read onlineASI HF220-50 specifications
| Frequency Range | up to 30 MHz |
|---|---|
| Power Gain | 14 dB Typical |
| Collector-Emitter Voltage | 110 V |
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
Source: ASI HF220-50 NPN Silicon RF Power Transistor Datasheet
All ASI HF220-50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the frequency range for the HF220-50?
The transistor is designed for applications up to 30 MHz.
From: ASI HF220-50 NPN Silicon RF Power Transistor Datasheet
What is the typical power gain at 220 W/30 MHz?
The typical power gain is 14 dB.
From: ASI HF220-50 NPN Silicon RF Power Transistor Datasheet
What is the primary application of the ASI HF220-50F?
It is designed for SSB transmitter applications in the 2 to 30 MHz band.
What is the ASI HF220-50F designed for?
It is a Common Emitter Device Designed for SSB Transmitter Applications in the 2 to 30 MHz Band.