This document describes the features and characteristics of the ASI ULBM2TE model, including maximum operating current, maximum operating voltage, maximum power dissipation, etc.
The ASI ULBM2TE is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is packaged in the TO-39GE style and is manufactured by Advanced Semiconductor, Inc.
Key electrical characteristics include a maximum collector current of 0.40A and a maximum collector-emitter voltage of 16V. The device operates within a junction temperature range of -65°C to +200°C.
| Collector Current (Ic) | 0.40A |
|---|---|
| Collector-Source Voltage (Vcso) | 36 V |
| Collector-Emitter Voltage (Vero) | 16V |
| Collector-Base Voltage (Vso) | 4.0V |
| Power Dissipation (Poiss) | 5W@Tc=25°C |
| Operating Junction Temperature (Tt) | -65 °C to +200 °C |
| Storage Temperature (Tste) | -65 °C to +150 °C |
| Package Style | TO-39GE |
The maximum collector current rating is 0.40A.
The maximum power dissipation is 5W at a case temperature of 25°C.
The minimum breakdown voltage between collector and emitter is 16 V.