This document is about the ULBM2SL product, including product features, characteristics and parameters.
The document is a technical specification sheet for the ASI ULBM2SL, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It includes order code information (ASI10678) and physical package dimensions.
Key electrical parameters are listed under Maximum Ratings and Characteristics sections. The device supports a collector current of 0.75 A and operates within a temperature range of -65 °C to +200 °C for operation.
| Collector Current (Ic) | 0.75 A |
|---|---|
| Emitter-Base Voltage (Veer) | 16V |
| Power Dissipation (Poiss) | 5.0 W @ Tc = 25 °C |
| Operating Temperature Range (Tt) | -65 °C to +200 °C |
The maximum continuous collector current is 0.75 A.
The maximum power dissipation is 5.0 W at a case temperature of 25 °C.
The typical power gain is 115 dB at a frequency of 470 MHz.