This is an English datasheet for ASI ULBM2, which introduces the features and characteristics of the product, including BVCEO, BVCES, BVCBO, VEBO, ICBO, hFE, Cob, PG, ηηC, IC, VCBO, VCEO, VCES, VEBO, PDISS, TJ, TSTG, θθJC.
This document is a datasheet for the ASI ULBM2, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is packaged in a .280 4L stud style and is identified by the order code ASI10675.
The datasheet provides maximum ratings for collector current, voltages, and power dissipation, along with operating temperature ranges. It also lists specific electrical characteristics including breakdown voltages, current gain, and capacitance values under defined test conditions.
| Package Style | .280 4L STUD |
|---|---|
| Metalization System | Omnigold™ |
| Collector Current (Ic) | 0.75A |
| Collector-Emitter Voltage (Vceo) | 16V |
The maximum collector current is 0.75A.
The maximum power dissipation is 5 W at 25°C.
The operating temperature range is from -65°C to +150°C.