Key facts
- Brand
- ASI
- Model
- MLN1027S
- Category
- Transistor
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-11
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ASI MLN1027S NPN Silicon RF Power Transistor Datasheet
The document describes the ASI MLN1027S, an NPN silicon RF power transistor designed with the Omnigoid™ Metalization System. It is packaged in a .260 4L Stud style.
Key specifications include a maximum collector-emitter voltage (Vceo) of 28 V and a power dissipation rating of 7.0 W at 25 °C. The device operates over a temperature range from -65 °C to +150 °C.
ASI MLN1027S specifications
| Package Style | .260 4L STUD |
|---|---|
| Metalization System | Omnigoid™ |
| Collector Current (Ic) | 0.250 A |
| Collector-Base Voltage (Vcb) | 40 V |
| Collector-Emitter Voltage (Vceo) | 28 V |
| Emitter-Base Voltage (Vebo) | 3.5 V |
| Power Dissipation (Pdiss) | 7.0 W @ Te = 25 °C |
| Operating Temperature Range | -65 °C to +150 °C |
Source: ASI MLN1027S NPN Silicon RF Power Transistor Datasheet
All ASI MLN1027S documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the ASI MLN1027S designed for?
The ASI MLN1027S is designed for use as an NPN silicon RF power transistor.
From: ASI MLN1027S NPN Silicon RF Power Transistor Datasheet
What is the maximum power dissipation rating?
The maximum power dissipation is 7.0 W at a temperature of 25 °C.
From: ASI MLN1027S NPN Silicon RF Power Transistor Datasheet
What is the ASI MLN1027SL?
The ASI MLN1027SL is an NPN silicon RF power transistor designed for specific applications.
From: ASI MLN1027SL NPN Silicon RF Power Transistor Datasheet
What is the maximum power dissipation rating?
The maximum power dissipation is 7.0 W when the case temperature is 25 °C.
From: ASI MLN1027SL NPN Silicon RF Power Transistor Datasheet
What is the maximum power dissipation at a case temperature of 25 °C?
The maximum power dissipation is 140 W at a case temperature of 25 °C.
From: ASI MLN1027SS NPN Silicon RF Power Transistor Datasheet
What is the operating temperature range for storage?
The storage temperature range is from -65 °C to +150 °C.
From: ASI MLN1027SS NPN Silicon RF Power Transistor Datasheet