Key facts
- Brand
- ASI
- Model
- ULBM5
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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ASI ULBM5 NPN Silicon RF Power Transistor Datasheet
This document is a technical datasheet for the ASI ULBM5, an NPN silicon RF power transistor. It specifies that the device utilizes the Omnigold™ Metalization System and comes in a .280 4L stud package style.
The datasheet provides maximum ratings including collector-emitter voltage (Vceo) of 36 V and total power dissipation (Pg) of 37 W. It also lists typical electrical characteristics such as current gain (hFE) at various frequencies up to 470 MHz.
ASI ULBM5 specifications
| Package Style | .280 4L STUD |
|---|---|
| Metalization System | Omnigold™ Metalization System |
| Collector-Emitter Voltage (Vceo) | 36 V |
| Emitter-Base Voltage (Vebo) | 18 V |
| Collector-Base Voltage (Vcbo) | 36 V |
| Emitter-Source Voltage (VeSO) | 4.0 V |
| Total Power Dissipation (Pg) | 37 W@ To= 25°C |
| Operating Temperature Range (Tj) | -65 °C to +200 °C |
All ASI ULBM5 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current rating for this transistor?
The maximum collector current (Ic) is rated at 20A.
What is the typical power dissipation when the case temperature is 25°C?
The typical power dissipation (Pdc) is 37 W at a case temperature of 25°C.
What is the ASI ULBM5SL designed for?
The ASI ULBM5SL is designed for use as an NPN silicon RF power transistor.
What is the maximum power dissipation rating?
The maximum power dissipation is 15 W at a temperature of 25°C.