This document introduces the characteristics of AMD Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory, including simultaneous read/write operations, single power supply operation, 2.7 to 3.6 volt read and write operations, 0.35 µm process technology, high performance, and low power consumption.
The Am29DL800B is an 8‑Megabit CMOS flash memory device that operates from a single 3.0 V supply (2.7‑3.6 V range). It supports simultaneous read/write operations, zero‑latency access, and offers up to 1 million program/erase cycles per sector.
The device is available in 44‑pin SO, 48‑pin TSOP and 48‑ball FBGA packages. Detailed pin descriptions, bus operation timing, and sector protection features are provided, along with ordering information and revision history.
| Memory density | 8 Megabit (1 M × 8‑Bit / 512 K × 16‑Bit) |
|---|---|
| Supply voltage | 3.0 V only (2.7‑3.6 V range) |
| Access time | 70 ns (fast), 90 ns, 120 ns |
| Active read current (5 MHz) | 7 mA |
| Standby mode current | 200 nA |
| Package options | 44‑pin SO, 48‑pin TSOP, 48‑ball FBGA |
| Endurance | ≥ 1 000 000 program/erase cycles per sector |
It operates from a single 3.0 V supply with a full voltage range of 2.7 V to 3.6 V.
The device guarantees a minimum of 1 000 000 program/erase cycles per sector.
The RESET# pin provides a hardware reset function.
It is offered in 44‑pin SO, 48‑pin TSOP, and 48‑ball FBGA packages.