This document contains information on a product under development at Advanced Micro Devices. The product is a flash memory with features such as simultaneous read/write operations, single power supply operation, high performance, and low current consumption.
The Am29DL800B is an 8‑Megabit CMOS flash memory device that operates from a single 3.0 V supply. It supports simultaneous read/write operations with zero latency, read‑while‑program and read‑while‑erase features, and offers up to 1 million program/erase cycles per sector. The device is available in 44‑pin SO, 48‑pin TSOP, and 48‑ball FBGA packages.
Key specifications include a full voltage range of 2.7‑3.6 V, access times as fast as 70 ns, active read current of 7 mA, standby current of 200 nA, and flexible sector architectures. The part complies with JEDEC standards and includes hardware sector protection, erase suspend/resume, and power‑saving modes.
| Memory capacity | 8 Megabit (1 M × 8‑Bit / 512 K × 16‑Bit) |
|---|---|
| Operating voltage | 2.7 V to 3.6 V (single 3.0 V supply) |
| Access time | 70 ns (typical), 90 ns, 120 ns options |
| Active read current | 7 mA |
| Standby current | 200 nA |
| Package options | 44‑pin SO, 48‑pin TSOP, 48‑ball FBGA |
| Endurance | ≥ 1 000 000 program/erase cycles per sector |
| Sector architecture | Two 16 Kword, two 8 Kword, four 4 Kword, fourteen 32 Kword sectors (word mode) |
It operates from 2.7 V to 3.6 V with a single 3.0 V supply.
The device guarantees at least 1 million program/erase cycles per sector.
It is offered in 44‑pin SO, 48‑pin TSOP, and 48‑ball FBGA packages.
Typical active read current is 7 mA at 5 MHz.